Complementary Metal Oxide Semiconductor - ορισμός. Τι είναι το Complementary Metal Oxide Semiconductor
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Τι (ποιος) είναι Complementary Metal Oxide Semiconductor - ορισμός

TECHNOLOGY FOR CONSTRUCTING INTEGRATED CIRCUITS
Complementary Metal Oxide Semiconductor; Complimentary Metal Oxide Semiconductor; Complementary metal-oxide-semiconductor; Complementary metal-oxide semiconductor; CMOS based; Cmos; CMOS transistor; COS/MOS; Complementary metal–oxide–semiconductor; Complementary metal–oxide semiconductor; Complementary symmetry metal oxide semiconductor; Complementary-symmetry circuit; Complementary metal oxide semiconductor; Complementary-symmetry; CMOS logic; C-MOS; Complementary MOS; Complementary Symmetry Metal-Oxide Semiconductor; Complementary Metal–Oxide–Semiconductor; Complementary Metal-Oxide-Semiconductor
  • drain and source]] respectively.
  • [[NAND gate]] in CMOS logic
  • The [[physical layout]] of a NAND circuit. The larger regions of N-type diffusion and P-type diffusion are part of the transistors. The two smaller regions on the left are taps to prevent [[latchup]].
  • Simplified process of fabrication of a CMOS inverter on p-type substrate in semiconductor microfabrication. In step 1, [[silicon dioxide]] layers are formed initially through [[thermal oxidation]] Note: Gate, source and drain contacts are not normally in the same plane in real devices, and the diagram is not to scale.
  • NOT logic gate]])

Complementary Metal Oxide Semiconductor         
<integrated circuit> (CMOS) A semiconductor fabrication technology using a combination of n- and p-doped semiconductor material to achieve low power dissipation. Any path through a gate through which current can flow includes both n and p type transistors. Only one type is turned on in any stable state so there is no static power dissipation and current only flows when a gate switches in order to charge the parasitic capacitance. (1999-06-04)
NMOS logic         
IMPLEMENTS LOGIC GATES AND OTHER DIGITAL CIRCUITS
N-type Metal-Oxide-Semiconductor; N-type metal-oxide-semiconductor; N-MOS; N-type MOS
N-type metal-oxide-semiconductor logic uses n-type (-) MOSFETs (metal-oxide-semiconductor field-effect transistors) to implement logic gates and other digital circuits. These nMOS transistors operate by creating an inversion layer in a p-type transistor body.
MOSFET         
TYPE OF FIELD-EFFECT TRANSISTOR
Mos technology; Metal oxide semiconductor field-effect transistor; MOSFETs; Metal-Oxide-Semiconductor Field-Effect Transistor; Double Diffused MOS; IGFET; Mosfet; Metal Oxide Semiconductor; Mosfets; DMOS; Mofset; Metal–oxide–semiconductor structure; Dmos; MOS FET; CMOSFET; Metal-Oxide-Semiconductor structure; MISFET; Metal oxide semiconductor; Metal–Oxide–Semiconductor structure; N-FET; Metal oxide semiconductor field effect transistor; Metal-oxide-semiconductor field-effect transistor; Metal-oxide-semiconductor structure; Metal–oxide–semiconductor field-effect transistor; Metal–Oxide–Semiconductor Field-Effect Transistor; Metal–Oxide–Semiconductor field-effect transistor; MOS capacitor; Metal-oxide-semiconductor; MOSFET heatsink; MOSFET heat sink; Metal-Insulator-Semiconductor Field-Effect Transistor; Metal–oxide–semiconductor; Igfet; Metal-oxide-silicon; Insulated-gate Field-effect Transistor; Insulated gate Field-effect Transistor; Insulated gate Field-Effect transistor; Insulated Gate Field-effect Transistor; Metal Oxide Semiconductor Field Effect Transistor; MOS-FET; Insulated gate field-effect transistor; Dual-gate FET; Dual-gate field-effect transistor; Metal-Oxide-Semiconductor field-effect transistor; Metal-oxide semiconductor; NFET; MOSFET scaling; NMOS transistor; PMOS transistor; PMOS FET; NMOS FET; MOS transistor; MOS technology; Metal–oxide–silicon
Metal Oxide Semiconductor Field Effect Transistor (Reference: IC, FET)

Βικιπαίδεια

CMOS

Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss", /siːmɑːs/, /-ɒs/) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips (including CMOS BIOS), and other digital logic circuits. CMOS technology is also used for analog circuits such as image sensors (CMOS sensors), data converters, RF circuits (RF CMOS), and highly integrated transceivers for many types of communication.

The CMOS process was originally conceived by Frank Wanlass at Fairchild Semiconductor and presented by Wanlass and Chih-Tang Sah at the International Solid-State Circuits Conference in 1963. Wanlass later filed US patent 3,356,858 for CMOS circuitry and it was granted in 1967. RCA commercialized the technology with the trademark "COS-MOS" in the late 1960s, forcing other manufacturers to find another name, leading to "CMOS" becoming the standard name for the technology by the early 1970s. CMOS overtook NMOS logic as the dominant MOSFET fabrication process for very large-scale integration (VLSI) chips in the 1980s, also replacing earlier transistor–transistor logic (TTL) technology. CMOS has since remained the standard fabrication process for MOSFET semiconductor devices in VLSI chips. As of 2011, 99% of IC chips, including most digital, analog and mixed-signal ICs, were fabricated using CMOS technology.

Two important characteristics of CMOS devices are high noise immunity and low static power consumption. Since one transistor of the MOSFET pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, like NMOS logic or transistor–transistor logic (TTL), which normally have some standing current even when not changing state. These characteristics allow CMOS to integrate a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most widely used technology to be implemented in VLSI chips.

The phrase "metal–oxide–semiconductor" is a reference to the physical structure of MOS field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-κ dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and smaller sizes.

Παραδείγματα από το σώμα κειμένου για Complementary Metal Oxide Semiconductor
1. There are a number of adequate ones on the market at prices lower than $50, but many rely on low–grade sensors using C.M.O.S. technology (for complementary metal oxide semiconductor) that offer lower resolutions and send fewer frames a second.